Seminar on ferroelectric memories

Join us for a MNTL seminar on Ferroelectric memories on March 22 from 12-1P in MNTL 1000, featuring Professor Asif Khan.

Background information on Asif Khan:

School of Electrical and Computer Engineering

School of Materials Science and Engineering (courtesy appointment)

Georgia Institute of Technology asif.khan@ece.gatech.edu https://electrons.ece.gatech.edu/

Abstract: Over the last decade, the discovery of ferroelectricity in fluorite-structured binary oxides, namely HfO2 and its alloyed variants, led to resurgent interests into ferroelectric devices for memory applications [1,2]. This presentation will focus on the latest developments in ferroelectric field-effect transistors (FEFETs) and their application in memory technologies, including embedded, storage class, and storage memories, as well as their potential uses as artificial intelligence, machine learning, and neuromorphic hardware. We will also discuss the scientific obstacles that must be overcome to integrate FEFETs into advanced technology nodes beyond 10nm, as well as the efforts of our research team to address these challenges. Specifically, we will focus on reducing write voltages to levels compatible with logic and addressing variations caused by polycrystallinity.

The research is supported by the National Science Foundation, the Defense Advanced Research Program Agency (DARPA), and an Intel Rising Star award.

[1] Mikolajick, T., Schroeder, U. & Slesazeck, S. The past, the present, and the future of ferroelectric memories. IEEE Trans. Electron Devices 67,

1434–1443 (2020).

[2] Asif Islam Khan, Ali Keshavarzi, and Suman Datta. “The future of ferroelectric field-effect transistor technology." Nature Electronics 3.10 (2020): 588-597.

Brief biography: Asif Khan is an Assistant Professor and onsemi Junior Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute of Technology. Dr. Khan’s research focuses on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric negative capacitance, which can reduce the power dissipation in transistors. His recent work includes the exploration of the reliability physics of ferroelectric field-effect transistors and metrology of ferroelectric devices. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER award (2021), the Intel Rising Star award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011) and University Gold Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence in teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020.